Mid-Wavelength Quantum-Well Infrared Photodetectors
Abstract
Quantum-well infrared photodetectors (QWIPs) have developed rapidly over the past ten years. Most of the efforts have been concentrated on the longwavelength and the very-long-wavelength regions of the thermal emission spectrum. Due to the success of InSb, HgCdTe, and PtSi detectors in the midwavelength infrared region, less emphasis has been placed on the development of QWIP focal-plane arrays operating in this wavelength band. However, recent interest in establishing pixel-registered, multispectral imaging capabilities has emphasized the need for high-quality mid-wavelength detectors that can be integrated with long-wavelength devices. In this presentation, the design and characterization of QWIPs using InGaAs/AlGaAs grown on GaAs substrates and InGaAs/InAlAs grown on InP substrates will be discussed. Both of these material systems can be used as single-wavelength, mid-wave devices and are compatible with vertical integration to give multispectral operation. Fundamental detector parameters, such as optical absorption strength, photoconductive gain, and temperature-dependent dark current, have been determined for various midwavelength QWIP designs and will be presented along with the results of singlepixel radiometric tests.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1998
- Accession Number
- ADA400089
Entities
People
- A. C. Goldberg
- J. W. Little
- M. .z. Tidrow
- Richard P. Leavitt
- S. W. Kennerly
Organizations
- United States Army Research Laboratory