Ultra-Thin Silicon Complaint Layers for Infrared Materials
Abstract
A simple method for the manufacture of an ultra-thin (<5nm) silicon layer that is bonded to a handle substrate for compliant substrate applications has been demonstrated. Compliant substrates have potential benefit for reducing defects in epitaxial materials grown on a large lattice mismatched substrates, including the growth of CdTe and HgCdTe on silicon substrates. In addition, an approach to fabricate a HgCdTe detectors directly over CMOS readout circuitry by epitaxially growing HgCdTe on a thin (211) silicon layer that is wafer bonded to the CMOS wafer is described.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1998
- Accession Number
- ADA400101
Entities
People
- Fritz J. Kub
- Karl D. Hobart
Organizations
- United States Naval Research Laboratory