Computational Methods for Calculation of Rates of Evaporation in the Ta-Hf-C System
Abstract
The objectives of the present study were to a) Apply the Schottky-Wagner model, used previously to describe binary compounds, to the ternary (Ta-Hf)C in order to generate equations capable of predicting the vapor pressures of tantalum, hafnium, and carbon over (Ta-Hf)C as a function of temperature and composition. b) Relate the computed vapor pressure curves to rates of vaporization characteristic of specific compositions through the Langmiur equation. c) Present explicit equations for the vapor pressure and rate of vaporization of each component as a function of temperature and composition. d) Carry out
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- ADA400433
Entities
People
- Gerald Stepakoff
- Larry Kaufman