Enhancement of Deep Acceptor Activation in Semiconductors by Superlattice Doping
Abstract
Gallium nitride (GaN) and related compounds are wide bandgap semiconductors suited for high power transistors and many other electronic and optoelectronic devices operating at high frequencies and elevated temperatures. A characteristic of GaN and related compounds is a high activation energy of acceptors, which leads to a low hole concentration in and high p-type resistivity of these materials. The present project proposed and demonstrated a novel approach to the well-known doping problem in GaN. This approach, called 'superlattice doping' uses thin layers of materials with different compositions and bandgap energies. As a result, acceptors exhibit a substantially higher activation and, as a result, the p-type conductivity is strongly enhanced. Under the project, AlGaN/GaN superlattices were demonstrated with resistivities that are a factor of ten lower than resistivities of p-type GaN. The properties of the superlattices, including the design, acceptor activation energy, resistivity, temperature dependent hole concentration and mobility, spatial carrier distribution, and optical properties were investigated and the results are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 04, 2002
- Accession Number
- ADA400478
Entities
People
- E. F. Schubert
Organizations
- Boston University