Development of GaN Mosfets and Misfets
Abstract
The purpose of this program is to develop GaN power MOSFETs and IGHFETs using novel gate dielectrics. In the past year we have: 1) demonstrated low Dit, 1-4 x 10(exp 11) eV(exp -1)/sq cm, oxide/GaN interfaces using low temperature deposition of Sc2O3 and MgO; 2) investigated the microstructure of the MgO low T dielectric and determined it to be single crystal at the semiconductor interface; 3) demonstrated, for the first time, inversion in a GaN device using a gate-controlled diode and 4) begun development of MgO/AlGaN/GaN IGFETs. As part of the effort to develop power devices, we have also investigated the effect of our low T dielectrics on the passivation of AlGaN/GaN power devices in collaboration with WPAFB. Improvements in power performance up to 3 dB have been obtained using MgO to suppress surface leakage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 30, 2002
- Accession Number
- ADA400502
Entities
People
- Cammy R. Abernathy
Organizations
- University of Florida