Spectroscopic Studies of Materials for Hole Burning Optical Storage
Abstract
Over the report period, an optical laboratory for characterization materials for frequency domain optical storage was upgraded. A practical approach for the determination of the quantum efficiency of persistent spectral hole burning using dispersive kinetics was developed. The optical properties of several Tm(3+) chelates complexes were studied. Optical absorption, steady state photoluminescence, and persistent spectral holes at the (3)H6(1)-(3)H4(1) left and right transition transition near 800 nm were studied within broad temperature range. Persistent spectral holes were detected at temperature between 1.5 and 20 K. Holes burning and refilling mechanisms were analyzed. A photoluminescence of five natural diamonds (type Ia) implanted with Xe ions with dose range 1 x 10(exp 13) - 5 x 10((exp 14)/sq cm was investigated as a function of thermal annealing at temperatures between 30 deg and 140 deg C. A narrow zero-phonon line at 813.7 nm (1.523 eV) was observed for all samples. As the annealing temperatures was increasing from 80 deg to 140 deg C, the luminescence at 813.7 nm gradually amplified in all four samples with rate depending on the ion implantation dose.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 14, 2002
- Accession Number
- ADA401206
Entities
People
- Anshel Gorokhovsky