Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

Abstract

Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN(x) produced ^ 70 to 75 percent recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recover of the current in GaN-cap HEMP structures and ^ 80 to 90 percent recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months of aging.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2002
Accession Number
ADA402373

Entities

People

  • D. Via
  • J. Gillespie
  • J. Sewell
  • R. Fitch
  • T. Jenkins

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Chemical Engineering
  • Chemical Vapor Deposition
  • Chemistry
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Materials
  • Materials Science
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Transistors

Fields of Study

  • Materials science

Readers

  • Explosive Engineering.
  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene