Process Modeling & In-Situ Sensor Feedback Based Adaptive Control of Molecular Beam Epitaxy and Ion-Assisted Reactive Etching of Advanced Semiconductor Structures
Abstract
This document summarizes the salient features of the accomplishments made during the period July 1, 1999 - June 30, 2001, of the above-titled MURI grant. The accomplishments include: (1) design and successful experimental implementation of single input (microwave power) adaptive real-time control of CF4/O2 plasma etching of Si(x)N(sub y) utilizing spectroscopic ellipsometry sensor feedback; (2) development of highly efficient dynamic load balancing, low overhead, and scalable algorithm to carry out atomistic simulations on massively parallel computing platforms and its testing for systems up to a billion atoms; (3) multi-resolution molecular-dynamics simulations of atomic scale stress distributions and dislocation propagation in Si/Si3N4 nanopixels with up to 27 million atoms; (4) developed a reflection-high-energy electron diffraction in-situ sensor based machine condition transfer function for reproducibility of molecular beam epitaxy (MBE) growth conditions; (5) examination of MBE growth on patterned surfaces and the role of surface stress engineering to achieve spatially selective growth of quantum dots; (6) large scale molecular dynamics simulations of bare and overlayer covered nanoscale square mesas of the Ge/Si (001) and InAs/GaAs (001) systems; (7) evidence from the InAs on GaAs (001) simulated stress relaxation for the observed self-limiting InAs overlayer thickness on GaAs nanomesas.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2001
- Accession Number
- ADA403891
Entities
People
- A. Madhukar
- C. Wang
- I. G. Rosen
- P. Vashishta
- R. K. Kalia
Organizations
- University of Southern California