Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

Abstract

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems. The Office of Naval Research (ONR) is funding research for the development of GaN-based microwave power amplifiers for use in future radar and communication systems. This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation. The polarization properties are suspected to enhance the two-dimensional electron gas (2DEG) at the AIGaN/GaN interface.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2002
Accession Number
ADA404952

Entities

People

  • Kenneth L. Holmes

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Charge Carriers
  • Compound Semiconductors
  • Computer Programs
  • Electron Mobility
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistor Amplifiers
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Aerospace Test and Evaluation
  • Maritime and Naval Warfare Studies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics