Growth of InGaN of Compliant Substrates
Abstract
The original research plan was to develop compliant substrate technologies for high In-containing InGaN growth. The progress in this research was unfortunately slowed by two factors. First, the PI could not find a close collaborator on InGaN growth and the PI's institute (then Cornell University) could not provide the infrastructure for the setup of the OMCVD reactor, which the PI received from Lucent Bell laboratory as a gift donation. As a result, no InGaN epitaxial growth experiment could be performed over the project period. Second, research results reported by other groups suggested that the proposed compliant substrate approach might not offer a solution to the problem of InGaN growth. The proposed approach was mainly based on the control and modification of the stress fields in the epitaxial layers. However, InGaN on sapphire, Si, or SiC is a far more complicated material system than traditional III-V on III-V or III-V on Si systems because the material quality is determined by many non-mechanical factors such as the surface chemistry, nucleation, and the built-in E-field, among other things. Therefore, we have made a few changes of our research directions, with the ultimate objective of advancing the knowledge and technology of 'versatile substrates'. The first change of research direction we made was to focus on the development of a working concept of versatile substrates. The goal is to establish a systematic, physics driven design methods for making composite substrates using materials that are readily available. The second change of research direction is to develop a truly viable material integration technology so that almost any two semiconductors can be bonded together without a joining layer, regardless of their crystal structures, mechanical and thermal properties. Furthermore, we like to assure that the technology is scalable to at least full 2" wafers. We believe that we have made significant progress in both areas.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 28, 2002
- Accession Number
- ADA405406
Entities
People
- Yu-Hwa Lo
Organizations
- University of California, San Diego