80-240 GHz Radar and Communications in Transferred Substrate HBT Technology

Abstract

The program supported the development of high bandwidth heterojunction bipolar transistors (HBTs) for use in ultra-high frequency radar and communication systems. This three years program led to improvement in state-of-the-art HBT bandwidth and to the development of design methodologies for transistor circuits at millimeter-wave (mm-wave) frequencies. Under funding from this program, the first small-signal HBT amplifiers in the 140-220 GHz frequency band were demonstrated.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2001
Accession Number
ADA405444

Entities

People

  • Mark J. W. Rodwell

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Bipolar Junction Transistors
  • Communication Systems
  • Electronics
  • Electronics Industry
  • Frequency
  • Frequency Bands
  • G Band
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Millimeter Waves
  • Power Gain
  • Semiconductors
  • Substrates
  • Transistors
  • Transmission Lines

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • 5G