Development of Pilot Production Capabilities for Silicon Carbide Power Devices and Integrated Circuits
Abstract
The effort funded by this contract encompassed two principal objectives: First, the creation of a silicon carbide device prototyping capability at Mississippi State University by the creation of the first SiC fab line independent of commercial control. Secondly, the demonstration of a power Schottky barrier diode (SBD) prototyped in preproduction lot size. This final report documents the detailed description of the design, fabrication methodology, and testing results of the 15,000 SBD's fabricated and tested. The principle accomplishments of the funded effort are: The completion of a SiC foundry including fabrication services. Schottky barrier diodes were fabricated with reverse blocking characteristics averaging 500 volts, and with on-state forward voltage drops of <2.5 volts at 100 amps/cm2. Finally, a commercial supplier of advanced and specialty discrete power devices evaluated and subsequently used the SBD's developed under this program to announce and release the first-ever commercial SiC power device using their proprietary high-power-density packaging, thus fulfilling the initial promise of the prototype manufacturing facility.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2002
- Accession Number
- ADA405514
Entities
People
- Evan G. Burnett
- Jeffrey B. Casady
- Michael Mazzola
Organizations
- Mississippi State University