Physics and Modeling of Compound SemiConductor Devices with Semi-Insulating and Native-Oxide Layers
Abstract
In looking at the literature the two primary sources for two-dimensional calculations that were found were Chin et. at and Poncet. Both of these investigators essentially solve the same set of governing equations. Chin solved a similar problem to that addressed above, but the computational domain was limited to the oxide only. No calculation was performed in either the virgin material or the mask. Poncet's problem is somewhat different and he does solve the governing equations in two separate regions. However he does not solve the governing equations in the virgin material and in the masks. Thus neither of the investigators concerns themselves with the coupled interface problem between the oxide and virgin material that was attempted in our study. The SEX study in that sense is much more ambitious. It has demonstrated that the pedestal and the cap do have an influence on the physics of the computation and they can have a significant effect on the shape of the oxide sub-region.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 2000
- Accession Number
- ADA405684
Entities
People
- H. L. Grubin