Spin Dependent Tunneling Magnetic Field Sensors for Clutter-Limited Detection
Abstract
The objective of this Phase I SBIR project is to develop a low power magnetic field sensor for use in clutter-limited detection environments, and to evaluate concepts for self-calibration of this field sensor under particular deployment conditions. The underlying technology for the sensor development is Spin Dependent Tunneling, an advanced form of magneto resistance. The unique aspect of SDT that is particularly attractive for this application is its intrinsically high impedance, which leads naturally to low power sensing devices. Previous sensor designs using SDT devices required about 200 mW of power to provide a magnetic field bias. A key effort in this project is to demonstrate a sensor design that does not require this electrical current-based magnetic field bias. Sensors employing a magnetic 'shape-bias' have been fabricated, packaged, and successfully demonstrated. This report contains the first results from these sensors, including sensitivity and noise vs. frequency data. Also, a study of power vs. sensor resistance was performed in which the power for the magnetic transducer and low noise amplifier were added together to get a total power.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 24, 2002
- Accession Number
- ADA405875
Entities
People
- Mark Tondra