Augmented Student Participation in Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs

Abstract

This AASERT grant is a supplementary grant which has provided funding for additional student involvement in the work supported by AFOSR grant Number 49620-96-1-0162, 'Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs'. The major aim of this research has been a theoretical investigation of: (1) important point defects and defect complexes in low-temperature-grown (LT) GaAs, and (2) the microscopic processes occurring at the surface during growth of GaAs films, which determine how much excess arsenic will be incorporated into the material.

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Document Details

Document Type
Technical Report
Publication Date
Jun 14, 2001
Accession Number
ADA405900

Entities

People

  • Caroline G. Morgan

Organizations

  • Wayne State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Cell Size
  • Compound Semiconductors
  • Crystal Lattices
  • Density Functional Theory
  • Electrons
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • Low Temperature
  • Materials
  • Materials Science
  • Molecular Dynamics
  • Point Defects
  • Semiconductors
  • Solid State Physics
  • Transitions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Research Science/Academic Research