Reduced Power Consumption in GaAs-Based Bipolar Cascade Lasers
Abstract
A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. We investigate the current voltage characteristics of individual degenerately doped n(+) and p(+) regions grown by MBE and then place the most promising designs within the individual laser substructures. This has resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2002
- Accession Number
- ADA406308
Entities
People
- J. E. Ehret
- J. E. Van Nostrans
- T. N. Dang
- T. R. Nelson
- W. J. Siskaninetz
Organizations
- Air Force Research Laboratory