Metamorphic HBT's: InP/InGaAs/InP Devices Grown on GaAs Substrates

Abstract

This program supported the development of metamorphic heterojunction bipolar transistors (MHBTs). We accomplished this by growing an InP based HBT layer structure on GaAs substrates. InP metamorphic buffer layer was chosen in thermal point of view. Peak values of current-gain cutoff frequency (f(sub t) = 207 GHz) and power-gain cutoff frequency (f(sub max) = 140) were obtained from If devices at bias conditions of V(sub CE) = 1.5 Volts and J(sub c) = 4 x 10(exp 5) A/sq cm. These are the highest values reported for metamorphic HBTs.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2002
Accession Number
ADA406365

Entities

People

  • Mark J. W. Rodwell

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Bipolar Junction Transistors
  • Circuits
  • Conductivity
  • Current Density
  • Electrons
  • Frequency
  • Heterojunction Bipolar Transistors
  • Integrated Circuits
  • Materials
  • Photolithography
  • Power Gain
  • Semiconductor Manufacturing
  • Semiconductors
  • Surface Roughness
  • Thermal Conductivity
  • Transistors

Fields of Study

  • Materials science

Readers

  • Analytical Mechanics
  • Electronics Engineering
  • Semiconductor Device Technology