First Principle Calculations of Electrical Levels for Radiation Induced Defects in Amorphous SiO2

Abstract

This report results from a contract tasking University College London as follows: The contractor will investigate electrical levels for radiation induced defects in amorphous SiO2. The objectives of this project are: (1) To develop an embedded cluster method for calculations of the electronic structure and spectroscopic properties as well as electron affinities and ionization potentials of point defects in crystalline and amorphous silica; and (2) To study the geometric electronic structure, stability and properties of proton and H(-) centres in a-quartz and alpha-SiO2. Details are provided in the attached statement of work.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2002
Accession Number
ADA406565

Entities

People

  • Alexander L. Shlyuger
  • P. V. Sushko

Organizations

  • University College London

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Atomic Structure
  • Atoms
  • Band Structures
  • Boundaries
  • Charge Carriers
  • Crystal Lattices
  • Crystals
  • Density Functional Theory
  • Electrons
  • Energy Bands
  • Geometry
  • Optical Properties
  • Point Defects
  • Protons
  • Radiation
  • Silicon Dioxide

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene