Infrared Semiconductor 3-5 Micrometers High Power InAsSb Based Injection Lasers
Abstract
The objective of this work is to develop high power, high temperature semiconductor injection mid-infrared lasers through the growth and characterization of Sb-based strained layer superlattice (SLS) laser structures at 4 microns operating in continuous wave mode at room temperature. Our approach is to use lasers employing strained layer superlattice active regions made from InAs/InAsSb, InAsSb/InAsSb and InAsP/InAsSb alloys. Single step MOCVD growth has been used for the growth of the lasers. The quality of the InAsSbP based materials has been appraised by structural, optical and electrical characterization techniques. Lasers structures based on the InAsSbP material system have been grown, fabricated and tested. Lasers fabricated with the InAsP/InAsSb superlattice alloy produced laser oscillation at ?=4.0 microns with output powers as high as 546 mW and 94 mW in pulsed and cw modes respectively. The InAs/InAsSb superlattice alloy also has been used for the active region of lasers with ? = 3.8-4.0. At low temperature, these lasers emit with very high power: up to 1.0 W with ? 3.8 microns and 842 mW with ? = 4.0 microns. Finally, InAsSb/InAsSb superlattice lasers have also been employed and have demonstrated a wide range of emission flexibility. Laser oscillation between 4.2 and 4.8 microns have been measured with powers as high as 460 mW.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2002
- Accession Number
- ADA407303
Entities
People
- M. Razeghi
Organizations
- Northwestern University