Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

Abstract

Partial Contents: Collective behavior of the interwell excitons biased GaAs/AlGaAs double quantum wells; InGaAs/GaAs heterostructures for long-wavelength light-emitting devices; Theory of threshold characteristics of quantum dot lasers; Properties of wide mesastripe InGaAsP heterolasers; Anisotropy of light emission from the surface LED based on the type-II ZnSe/BeTe heterojunction; Unipolar semiconductor lasers on asymmetric quantum wells; Injection laser threshold from the standpoint of collective resonance; Electroluminescence study of green Be-contained II-VI lasers; The power of catastrophic optical mirror degradation in InGaAs/AlGaAs/GaAs QW laser diodes; Intersubband population inversion under resonance tunneling in wide quantum well structures; Power conversion efficiency in a quantum dot based diode laser; Quantum well DFB laser having a curved grating structure.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADA407315

Entities

People

  • L. Esaki
  • Zh. Alferov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Distributed Feedback Lasers
  • Electromagnetic Fields
  • Electronics Industry
  • Electronics Laboratories
  • Laser Applications
  • Laser Beams
  • Light (Electromagnetic Radiation)
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Modules (Electronics)
  • Nonlinear Optics
  • Optical Correlators
  • Optical Properties
  • Optics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing