AlInGaN-Based Crested Quantum Tunneling Barriers for Advanced Data Storage Systems

Abstract

Semiconductor memory is one of the key elements in modern computing systems. Today, floating-gate ("lash) memory, which exhibits very long writing and erasing time, is widely used in many applications. One way to achieve dramatic speed-up of floating-gate memories by quantum-mechanical tunneling is through implementation of specially shaped ("crested") tunnel barriers. In contrast to the conventional uniform Fowler-Nordheim barriers used. in existing floating gate memories, the maximum height of the crested barrier may be strongly suppressed with even moderate changes of applied electric field. The most important step in the development of the crested barrier idea is to find suitable combinations of semiconductor materials, which would provide barriers with tunneling transparency changing by 18 orders of magnitude under a change of applied voltage by a factor of 2 to 3, in moderate electric fields.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2002
Accession Number
ADA407734

Entities

People

  • Jianyu Dang

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Sensors

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Chemical Vapor Deposition
  • Conduction Bands
  • Contrast
  • Data Storage Systems
  • Electric Fields
  • Electron Density
  • Electrons
  • Energy Bands
  • Materials
  • Memory Devices
  • Quantum Tunneling
  • Semiconductors
  • Transparencies
  • Tunneling
  • Tunnels

Readers

  • Applied Combinatorial Optimization and Logic Circuit Design.
  • Integrated Circuit Design and Technology.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots