Gateisolatoren fur MOS-Feldeffekttransistoren (Gate Isolators for MOSFETs)
Abstract
The dissertation deals with Metal Oxide Semiconductor (MO S) field-effect transistors and how gate isolators have come to play a role in these semiconductors since the latter's introduction in the early 1970s. Testing the reliability of MOSFETs under hot carrier and bias temperature stress, the author then proceeds to the nitrogen barrier against boron diffusion. The bulk of the work concentrates on the tunneling of charged particles through a thin silicon dioxide layer as it functions in dual work function complementary MOS technology. Various gate leak flow mechanisms are used in examples with alternated MOSes. An analysis of the reliability with silicon dioxide layers with a thickness under five newtonmeters and titanium dioxide as an alternative gate nonconductor comprise, respectively, the last two chapters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2000
- Accession Number
- ADA407967
Entities
People
- Thomas Pompi