Selektiver Wasserstoffsensor auf der Basis von halbeitenden Ga2O3-Duennschichten (Selective Hydrogen Sensors on the Basis of Semiconductors Ga2O3 Thin Layers)
Abstract
This dissertation focuses on the modification of a semiconductive Ga2O3 gas sensor for the detection of hydrogen, realized by the introduction of a Si-O2 layer on the sensor. Despite experimentation with this initial and multi-tiered subsequent layers, an increase in the sensitivity or selectivity of the hydrogen sensor could not be obtained. The plausible emergence of dipole loadings near the interface of SiO2 and Ga2O3 can be attributed to the deffusion of hydrogen in the SiO2 layer. Finally the hydrogen sensor was integrated into an online-monitoring system for the detection of H2 in transformers' insulation oil, in order to show its capacity to fulfill its applications under real conditions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADA407987
Entities
People
- Thomas Weh