Stoechimetrieuntersuchungen von Schichtsystemen fuer die Nanoelektronik (Stoichiometry Experiments of Layer Systems for Nanoelectronics)

Abstract

The study deals with problems in the stoichiometric analysis of thin layers in silicon semiconductors, with the secondary mass-spectrometric system (SIMS) and the Rutherford backscatter spectrometric system (RES) selected as analytical methods. The appropriateness of these methods to the tests concluded is demonstrated ultimately in the study: SIMS is proven to be unfit, whereas the RBS system, as the author expected from the beginning, exemplifies the barometer by which the stoichiometric analysis of mixed layers can be scrutinized. SIMS is then shown to be ideal for determining the concentration of doping substances, die to the system's relative measuring capacity. Ever-thinning layers, however, tend to be problematic for both approaches.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2000
Accession Number
ADA408055

Entities

People

  • Peter Bieringer

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Backscattering
  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Detectors
  • Diffraction
  • Electron Microscopes
  • Field Effect Transistors
  • Mass Spectrometry
  • Materials
  • Measurement
  • Metal-Oxide-Semiconductor Field-Effect Transistors
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy

Readers

  • Combustion science or combustion engineering.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene