Advanced Semiconductor Light Emitting Materials
Abstract
Photoelectron spectroscopy (PES) methods were developed for investigating interface and bulk properties of crystals for advanced electronic devices and optical devices. These and established PES methods were used to probe and characterize two classes of materials. One is wide-band gap semiconductors (GaN is prototype), which are under development for high frequency and high power electronic devices as well as short wave length light emitters such as bioagent detectors: For CVD hexagonal oriented GaN we measured the bulk electronic structure BANDS and the surface electronic states. The interface formation with Mg adsorption is determined. A unique internal-reference-beam holography method was developed and used to measure surface atomic positions and applied to Mg on GaN. The photoelectron-holographic-imaging technique was also used for ethylene and acetylene site data on the 100 face of silicon. The other material system is insulators doped with rare-earth atoms for optical information devices. For the first time the 4f rare-earth levels were measured with reference to the host (YAG) band gap.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 18, 2002
- Accession Number
- ADA408644
Entities
People
- Gerald J. Lapeyre
- Huasheng Wu
- Mickey Yu
Organizations
- Montana State University