Crested Tunnel Barriers for Fast, High Density, Nonvolatile Memory Devices
Abstract
Report developed under STTR Contract for Topic AF01-T003. Crested multi-layer tunnel barriers have been proposed, which offer a revolutionary solution to overcome density to speed trade-offs characteristic of present data storage technologies. Practical implementation of the proposed technology will involve use of thin film materials that are readily manufacturable and CMOS-compatible. A critical need exists for experimental verification of the theoretical predictions regarding these advanced structures. In addition, challenges lay ahead in developing a suitable deposition technology for fabrication of the ultra-thin graded or multilayered structures involved. Advanced Fuel Research, Inc., and the State University of New York at Stony Brook will develop a technology for fabrication of crested tunnel barrier devices based on promising thin film material combinations. Phase I research demonstrated tunneling in thin film barrier structures in good agreement with theoretical predictions. Phase II will continue development of tunneling theory and optimize the process for fabricating layered tunnel barrier structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 28, 2002
- Accession Number
- ADA408876
Entities
People
- David Hamblen
- E. Cimpoiasu
- Joseph Cosgrove
- Konstantin K. Likharev
- Sergey K. Tolpygo