Defect Engineering of Low-Temperature Grown GaAs for Terahertz Radiation Applications

Abstract

This report results from a contract tasking Semiconductor Physics Institute as follows: The contractor will investigate Gallium Arsenate (GaAs) based terahertz emitters. A variety of GaAs devices will be grown and characterized by standard electrical and optical techniques. The terahertz emission efficiency and its spectral width of the samples will also be measured. The goal of this investigation is to find the optimal conditions for the growth of GaAs layers from which efficient terahertz emitters for a frequency range of 0-10 THz can be manufactured.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADA409608

Entities

People

  • Arunas Krotkus

Organizations

  • Semiconductor Physics Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Blackbody Radiation
  • Detection
  • Detectors
  • Electromagnetic Radiation
  • Frequency
  • Laser Beams
  • Laser Pulses
  • Lasers
  • Light (Electromagnetic Radiation)
  • Low Temperature
  • Measurement
  • Quantum Yields
  • Radiation
  • Refractive Index
  • Semiconductor Physics
  • Semiconductors
  • Terahertz Radiation

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics