Radiation Effects on Space-Based Optoelectronic Materials and Devices

Abstract

We have investigated the irradiation effects on interband and intersubband transitions in III-V semiconductors quantum wells and superlattices. We also investigated irradiation induced defects in III-nitride thin films including C-H complexes in AlGaN. In particular, we investigated the Gamma-ray, electron, neutron, He(+)-ion, and proton irradiation effects on the intersubband transitions in multiple quantum wells. Thermal annealing recovery of the intersubband transition (or thermal recycling) in heavily irradiated samples has been investigated. The final report contains detail discussions of the results obtained during the last three years. At the end of the report, we listed our professional activities including technical papers, books, symposia, invited talks, and students supported by the grant.

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 2002
Accession Number
ADA409755

Entities

People

  • Omar Manasreh

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Lattices
  • Electron Gas
  • Electrons
  • Energy Bands
  • Films
  • Heterojunctions
  • Materials
  • Optical Properties
  • Point Defects
  • Quantum Wells
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Nuclear and Radiation Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Space