Chemical Beam Epitaxy of Indium Nitride Using Seeded Supersonic Beams of Ammonia and Trimethyl-Indium
Abstract
Low-temperature growth of indium nitride (InN) films on gallium nitride(OOO1) substrates was achieved by supersonic jet epitaxy using ammonia (NH3) and trimethyl-indium (TMIn). Unfortunately, there was no indication of a reaction pathway involving TM In and NH3 that results in InN growth at temperatures less than approximately 500C. We infer that NH3 decomposition is the rate-limiting step in InN growth using NH3 and elemental In or TM In. Highly selective generation of ground-state nitrogen atoms for growth was accomplished using a radio-frequency (rf) discharge supersonic jet source. The rf discharge supersonic jet source was charartized by optical emission spectroscopy and time-of-flight appearance potential mass spectrometry.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2002
- Accession Number
- ADA411024
Entities
People
- Harold H. Lamb
Organizations
- North Carolina State University