Development of High-Sensitivity Nitride Solar-Blind Detectors and Detector Arrays Using Low-Dislocation-Density Nitride Surfaces
Abstract
This work explored the application of III-V nitride semiconductors for optical detectors in the ultraviolet (UV) region of the electromagnetic spectrum. Metalorganic vapor phase epitaxy was used to synthesize thin film p-i-n photodiode structures on double side polished sapphire substrates. These structures were fabricated into photodiode devices using generally accepted techniques for dry etching and p and n-contact metallizations. Test devices were characterized which demonstrated quantum efficiencies as high as 80%. along with extremely low dark currents; resulting in photodiode spectral detectivities as large as 6*10(exp 13) cmHz(exp 1/2)/W. Devices were designed and demonstrated for a series of detection regions ranging from 365 nm to 250 nm. Photodiode arrays were also fabricated and flip-chip bonded to silicon readout integrated circuits (ROICs) to form the basis of visible-blind and solar-blind UV digital cameras. These UV-specific digital arrays were tested using focal plane array hardware and software obtained from SE-IR, Inc.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2002
- Accession Number
- ADA411053
Entities
People
- J. F. Schetzina
Organizations
- North Carolina State University