Optoelectronic Integrated Circuits Fabricated Using Atomic Layer Epitaxy

Abstract

Atomic Layer Epitaxy (ALE) is studied for use in the fabrication of optoelectronics integrated circuits, A new approach to ALE is investigated in which the process is performed under UHV conditions using organometallic compounds a sources for the reactive species. A vacuum ALE system was constructed and the mechanisms for growth of GaAs using trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) were investigated using a set of in situ tools - reflection difference spectroscopy, mass spectroscopy, and reflection high energy electron diffraction. Studies of the interplay of total growth rate and background impurity (Carbon) incorporation were investigated. The growth rate was found to be limited by the exposure time required to insure complete removal of the CH3 species from the surface to reduce C incorporation. Selective area growth of GaAs on patterned substrates was undertaken to investigate the orientation dependences of the growth morphology on pattern direction.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1995
Accession Number
ADA411541

Entities

People

  • Paul Daniel Dapkus

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Crystal Growth
  • Electronics Industry
  • Electronics Laboratories
  • Epitaxial Growth
  • Fabrication
  • Integrated Circuits
  • Laser Beams
  • Mass Spectrometry
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Optics
  • Optoelectronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene