Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride

Abstract

Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al(x)Ga(1-x)N, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2003
Accession Number
ADA413035

Entities

People

  • Erin N. Claunch

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Aluminum Nitrides
  • Band Gaps
  • Charge Carriers
  • Compound Semiconductors
  • Crystals
  • Detectors
  • Electronics Laboratories
  • Energy Bands
  • Energy Levels
  • Gallium Nitrides
  • Measurement
  • Modules (Electronics)
  • Optical Properties
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics