Investigation of Jet Vapor Deposited (JVD) Silicon Oxide/Nitride/Oxide (ONO) Films as Gate Dielectrics for SiC and GaN Devices

Abstract

Jet vapor deposited (JVD) silicon dioxide-nitride-dioxide (ONO) films are investigated as gate dielectrics for SiC MOS transistors and GaN high-electron-mobility transistors (HEMTs). The JVD process employs supersonic jets of a light carrier gas such as helium to transport depositing vapor from the source to the substrate. The high impact energies of the depositing species allow the use of room-temperature substrate, which contributes to improved film quality.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 2003
Accession Number
ADA413131

Entities

People

  • James A. Cooper Jr.

Organizations

  • Purdue University

Tags

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Dielectric Films
  • Dielectrics
  • Electron Mobility
  • Electrons
  • High Temperature
  • Materials
  • Materials Processing
  • Metals
  • Mobility
  • Power Electronics
  • Resistance
  • Semiconductors
  • Silicon Carbide
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • International Relations and Conflict Resolution
  • Petroleum Engineering
  • Semiconductor Device Technology

Technology Areas

  • Hypersonics
  • Microelectronics
  • Microelectronics - Graphene