Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications
Abstract
Homojunction bipolar transistors (BJTs) have been designed, fabricated, and characterized in 4H-SiC Devices optimized for high current gain have betas as high as 55, a new record for SiC BJTs. Devices optimized for blocking voltage exhibit blocking voltages of 3,200 V, again a new record for SiC BJTs. For the high-gain devices, the critical parameter is the base doping, which must be high enough to prevent punchthrough, while low enough to achieve a high emitter injection efficiency. The optimum value in these devices is a doping of about 1xl0(17) cm(3) at a base thickness of 1 micron. Another critical parameter is the lateral spacing between the edge of the emitter and the implanted P+ region used to form the base contact.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 2003
- Accession Number
- ADA413135
Entities
People
- James A. Cooper Jr.
Organizations
- Purdue University