Investigation of the Quantum 1/f Effect and of other Fluctuations in the Radiation-Hardening of Multiple-Satellite Systems
Abstract
The author's quantum 1/f noise formulas were used for the first time here to calculate from first principles analytically, and to graph as a function of the absorbed dose, the radiation-induced 1/f noise increase injunction- type devices, such as junction-based photodetectors, BJTs, HBTs, mixers, etc. The same is done also for FET-type devices, such as FETs, or HFETs, yielding even a reduction of the equilibrium 1/f noise expected in high-mobility semiconductors for low radiation dose, and favoring them for radiation hardening. The same theory was adapted and used here for the first time to derive simple engineering formulas for the quantum 1/f effect in the radiation resistance of antennas from first principles. This allows for the optimization of the directivity of antenna arrays or of the response from multiple satellite systems in space. The same formulas were adapted and used here for the first time to derive analytical engineering formulas allowing for the quantum 1/f optimization of GaN/AlGaN HFETs, RTDs, biological and chemical resonant BAW and SAW quartz sensors, various silicon MEMS resonators, all types of spintronic devices, cavity resonators, nano-devices and bent ultra-thin semiconductor devices. This allows optimizing all these devices and systems for ultra-low 1/f noise and system phase noise, with staggering impact on major DOD instrumentation performance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 14, 2003
- Accession Number
- ADA413206
Entities
People
- Peter H. Handel
Organizations
- University of Missouri