Progress in Grid Amplifiers
Abstract
In view of the growth in demand in high data rate communications, satellite communications, radar imaging and detection applications and astronomical applications, microwave and millimeter wave power amplifiers capable of providing tens of watts are in need. The recent improvements in III-V solid-state technology provide high yield reliable transistors that can be fabricated in a large quantity. This capability allows the development of grid amplifiers combining power of more than 500 transistors. This paper presents the recent achievements in grid amplifiers. In particular a 5W, 8dB gain, 15% power added efficiency (PAE) monolithic grid amplifier and a 1W monolithic grid oscillator with tuning range from 37.54lGHz are going to be presented. The associated calibration, measurement and packaging techniques are discussed as well.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2003
- Accession Number
- ADA413414
Entities
People
- Blythe Deckman
- Chun-tung Cheung
- David B. Rutledge
- James J. Rosenberg
Organizations
- California Institute of Technology