Sensitive Quantum-Dot Infrared Photodetector with Barrier-Limited Photoelectron Capture

Abstract

Our research on quantum-dot infrared photodetectors has been concentrated on increasing of photoconductive gain and responsivity. Innovative idea in design of sensitive quantum-dot infrared photodetector is to use a structure with quantum dots surrounded by repulsive potential barriers, which are created due to interdot doping. Spatial separation of the localized ground state and continuum conducting states of the electron increases significantly the photoelectron capture time and photoconductive gain. Large value of the gain results in high responsivity, which in turn improves detectivity and raises the device operating temperature.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 30, 2002
Accession Number
ADA413605

Entities

People

  • Vladimir Mitin

Organizations

  • Wayne State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computer Simulations
  • Electronics
  • Electrons
  • Gain
  • Ground State
  • High Gain
  • Photodetectors
  • Photoelectrons
  • Quantum Dots
  • Quantum Tunneling
  • Simulations
  • Solid State Electronics
  • Tunneling

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing