SiGe Intersubband Detectors for Terahertz Communication and Sensing
Abstract
We report on the design and fabrication of THz detectors based on silicon germanium nanostructures grown by MBE to obtain intersubband transitions in the energy range from 4.1 meV to 4.1 meV (1 to 10 THz). The absorption and photoresponse was characterized by Fourier Transform Infrared Spectroscopy (FTIR), and simulated using a 6 band k*p band structure calculation. A multistep SiGe quantum well structure was designed and fabricated to have transitions between two heavy hole (HH) states. The best device, SGC 439, had an absorption spectrum that agreed reasonably with the photocurrent spectrum and showed response peaks at 280 and 360/cm (8.4 THz and 10.8 THz) with the sample temperature at 77 K. It is concluded that SiGe quantum well devices are feasible as THz detectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2003
- Accession Number
- ADA413737
Entities
People
- J. Kolodzey
Organizations
- University of Delaware