InAs Device Process Development and Characterization
Abstract
This report summarizes the results of the initial effort in InAs bipolar device development. InAs is one of the III-V semiconductor materials exhibiting a relatively small energy bandgap and extremely high electron mobility, properties both desirable for high-frequency, low-power dissipation device applications. The major accomplishment of this work is the development of a robust device fabrication process that can be directly transferred to an industrial environment. Ti/Pt/Au was used as a universal n- and p- type contact with record low contact resistances. For the base access etch, which is one of the critical issues for bipolar device processing, a unique doping dependence etch was discovered for InAs that allows the base access etch to stop at the appropriate layer. The low-bandgap InAs and heavy doping resulted in premature breakdown through current tunneling and uncontrollable reverse leakage current. This effect was addressed successfully through interactive MBE growth, device characterization, and material analysis techniques. Pn junctions, the building blocks for bipolar transistors were produced with reverse leakage current as low as 10 micronA at -1 V and breakdown voltages as high as 6.5 V. The InAs pn junctions produced had promising rectifying diode characteristics for low-voltage operation and high-speed current amplifier applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 19, 2003
- Accession Number
- ADA413747
Entities
People
- Kiki Ikossi
Organizations
- United States Naval Research Laboratory