Ultra High Speed Heterojunction Bipolar Transistor Technology
Abstract
Scaling of HBTs for high circuit bandwidth and high current gain (f (sub tau)) and power gain (f max) cutoff frequencies is summarized. Key bandwidth limits include scaling of the collector-base junction, the emitter Ohmic contact resistivity and greatly increased current density. Substrate transfer processes allow submicron collector sealing, and have produced HBTs with 20 dB power gain at 100 GHz. 295 GHz f (sub tau) has been obtained. Key to continued progress is improvement of emitter contacts and reliable operation at approximately 10 to the 6th power Amperes/cm2 current density.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2000
- Accession Number
- ADA413790
Entities
People
- D.A. Scott
- M. Dahlstrom
- M. Urtega
- Mark J. W. Rodwell
- Y. Betser
Organizations
- University of California, Santa Barbara