Quantum Transport, Magnetic Field Sensor, an Integrated Amplification in no el Si/SiGe Heterostrtucture Devices

Abstract

Studies of high mobility Si/SiGe heterostructure devices have been analyzed in light of correlations among carriers. Single-particle models fail to describe the metal-insulator transitions observed in them. Attempts to confine the carriers and create lateral tunneling structures and magnetic field sensors have revealed ambiguous results that cannot be distinguished from disorder in the devices but which show some promise for device applications.

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Document Details

Document Type
Technical Report
Publication Date
May 27, 2002
Accession Number
ADA413988

Entities

People

  • Sean Washburn

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Amplification
  • Astronomy
  • Detectors
  • Dielectrics
  • Diseases And Disorders
  • Field Effect Transistors
  • Magnetic Detectors
  • Magnetic Fields
  • Materials
  • Metal-Insulator Transitions
  • North Carolina
  • Phase Diagrams
  • Semiconductors
  • Transitions
  • Transport Ships
  • Two Dimensional

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing