Development and Application of Heterojunctions for Nanoelectronics for Silicon

Abstract

The goals of this program have been taken up by major efforts at IBM Watson Research Center, Intel Portland Technology Development Motorola and Texas Instruments. Our program has interacted with all of these programs except for the effort at Motorola. In particular the following areas have been addressed. First, the behavior of the semiconductor-insulator interface formed between silicon and cerium oxide has been quantified. Most important, the trap state density, interface roughness and conduction band offset with silicon are critical parameters in determining cerium oxide's usefulness for MOS applications. Secondly, more exact knowledge of the nature of cerium oxide in thin film form has been ascertained in order to predict its applicability as a tunnel barrier for a silicon heterostructure.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 02, 2002
Accession Number
ADA414212

Entities

People

  • T. C. Mcgill

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Chemistry
  • Conduction Bands
  • Crystal Structure
  • Crystals
  • Dielectric Permittivity
  • Dielectrics
  • Electronics
  • Electronics Industry
  • Energy Bands
  • Heterojunctions
  • Materials
  • Oxide Films
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Thin Films

Readers

  • Research Science/Academic Research
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene