Molecular Beam Epitaxy of Nitrides: Theoretical Modeling and Process Simulation

Abstract

A rate equation approach is proposed based on physically sound surface processes to investigate the molecular beam epitaxy growth and doping of III-N using ammonia and EC plasma source. A surface-riding layer of Ga/In/Mg and ammonia or N plasma species with several associated physical and chemical processes is included in this model. In the case of ammonia, the simulated Ga incorporation rate as a function of ammonia pressure and substrate temperature are in excellent agreement with the experimental data. In the case of InGaN growth, results of In incorporation obtained from simulations and experiments are in excellent agreement for various growth conditions. In segregation is found to be negligible below 580 deg C and heavy above 640 deg C. For the given flux rates, it is found that Mg segregates to the surface with the zone is formed below the surface layer.

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Document Details

Document Type
Technical Report
Publication Date
May 22, 2003
Accession Number
ADA414519

Entities

People

  • Rama Venkat

Organizations

  • University of Nevada, Las Vegas

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Agreements
  • Chemical Reactions
  • Compound Semiconductors
  • Computer Programs
  • Differential Equations
  • Epitaxial Growth
  • Equations
  • Experimental Data
  • Flow Rate
  • Heat Of Activation
  • Low Temperature
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Semiconductors
  • Simulations
  • Students
  • Substrates

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology