Symposium L: GaN and Related Alloys
Abstract
In Symposium L on GaN and Related Alloys, recent results on growth and characterization of III-nitride semiconductors and their application in optoelectronic and electronic devices were reported. Several advances were reported in nitride-based technology for visible and UV-light emitters. Researchers at the University of South Carolina presented results on LEDs operating at 250 nm, while NTT researchers presented 350-nm UV LEDs with maximum external efficiency of 1.4%; phosphor-coated red and white LEDs incorporating their UV LEDs were also described by NTT. Lumileds researchers discussed the performance of their latest Luxeon LEDs, which achieve external quantum efficiency of 25% and 10% at 450 nm and 530 nm, respectively. In addition, Lumileds presented a demonstration of backlighting using 34 Luxeon chips to create a full-color light source with color temperature up to 15,000 K. A number of notable results in the nitride materials characterization arena were presented, particularly with regard to defect structure and the behavior of Mg in p-doped GaN. Continued advances were also reported in the development of nitride-based electronic devices. New materials and device designs for nitride-based heterostructure FETs, targeted for rf power applications, were presented by several research groups. Included among these was a discussion of advances in the growth and fabrication of nitride electronic devices on Si substrates. Also reported were initial results on an AlGaAs-GaAs-GaN heternstructure biopolar transistor realized using a wafer fusion process for device fabrication.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 09, 2003
- Accession Number
- ADA414656
Entities
People
- Angela Rizzi
- Ed T. Yu
- James S. Speck
- Yasuhiko Arakawa
Organizations
- Materials Research Society