Ultraviolet-spectrum Light-emitting Diodes with Omnidirectional Reflectors for High Extraction Efficiency

Abstract

This report covers the period August 1st to August 31st 2002 while I was working for Boston University (BU). On September 1st I transferred to Rensselaer Polytechnic Institute (RPI). It is my understanding that this report is required for the transfer of the contract from BU to RPI. The reflective properties of a triple-layer omni-directional reflector have been investigated. The reflector has a two-fold purpose namely it serves as ohmic contact to the top GaN layer of a UV LED and also as a reflector. The reflector consists of the semiconductor (GaN), indium tin oxide (ITO) and a metal layer. It was found that the reflector has reflectivities exceeding 90% for all angles of incidence. Such highly reflective ohmic contacts are desirable as conventional ohmic contacts represent a major loss mechanism in UV LEDs.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 10, 2003
Accession Number
ADA414747

Entities

People

  • E. F. Schubert

Organizations

  • Boston University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Chemical Warfare Agents
  • Contracts
  • Information Operations
  • Light Emitting Diodes
  • Materials
  • Metal-Semiconductor Junctions
  • Military Research
  • Optical Communications
  • Optical Detection
  • Optical Properties
  • Reflectivity
  • Reflectors
  • Semiconductors
  • Solar Radiation
  • Spectra
  • Ultraviolet Spectra

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Research Science/Academic Research

Technology Areas

  • Microelectronics