Journal of Crystal Growth Volume 246, Nos. 1-2, pp.1-176, December 2002
Abstract
Partial Contents: Classical semiconductors. Temperature control in InGaAs-based quantum well Structures grown by molecular beam epitaxy on GaAs (100) and GaAs (111)B substrates; Atomic depth distribution and growth modes of Sn on Si(1111 41-In and alpha-33-Au surfaces at room temperature; Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum; Defect-selective etching of GaN in a modified molten bases system; N-type doping behavior of Al(0.15)Ga(0.85)N:Si with various Si incorporations; On mass transport and surface morphology of sublimation grown 4H silicon carbide; A global thermal analysis of multizone resistance furnaces with specular and diffuse samples; The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy; A new phenomenon in the floating-zone (FZ) growth of Si nanowires; Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates; Temperature dependence of stresses in GaN/AlN/6H SiC(0001) structures: correlation between AlN buffer thickness and intrinsic stresses in GaN; Crystal structure and ferroelectricity of nanocrystalline barium titanate thin films; Preparation of high quality anthracene crystals using double run selective self-seeding vertical Bridgman technique (DRSSVBT); Relationships between DTA and DIL characteristics of nano-sized alumina powders during 0- to alpha-phase transformation; Characteristics and crystal structure of the Ba(Zr(x) Ti(1-x)O3 thin films deposited by RF magnetron sputtering.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2002
- Accession Number
- ADA415295
Entities
People
- D. T. Hurle
- G. B. Stringfellow
- M. Schieber
- R. Kern
- Robert S. Feigelson