AFRL/GaAsTek Heterojunction Bipolar Transistor (HBT) Process Development
Abstract
A CRDA was established between Aerospa9e Components and Subsystem Division (AFRL/SND) and ITT GaAsTek to transfer the design, manufacture, and development of the Air Force's thermally shunted HBT (TSHBT) process to GaAsTek and to co-develop, design, and fabricate novel power amplifiers using GaAsTek's Process 5 MMIC foundry. GaAsTek was a well-known DoD MMIC foundry for high-power x-band amplifiers utilizing MESFET technology. AFRL/SND was known for developing a TSHBT capability for high power density devices. By working together, plans were made to transfer the TSHBT technology to GaAsTek. The Air Force was to benefit from this transfer by having a reputable DoD foundry be capable of manufacturing high-power amplifiers for Air Force system integration. Another added benefit would be having Air Force circuit designers work with a foundry to design and process novel power amplifiers for future Air Force system needs. GaAsTek was to benefit by gaining a new device capability, which could be used for commercial as well as military markets.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2001
- Accession Number
- ADA415646
Entities
People
- James K. Gillespie
Organizations
- Air Force Research Laboratory