Controlled Nucleation and Growth in Semiconductor Epitaxy

Abstract

During Phase 1 support two types of ultrasonic transducers were designed and fabricated. These transducers were utilized for ultrasonically assisted deposition of silicon under Molecular Beam Epitaxy (MBE). Epitaxial Si growth on (100) Si wafers has been observed at reduced substrate heater temperatures when accompanied by simultaneous ultrasonic agitation of the substrate during deposition.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 2003
Accession Number
ADA415932

Entities

People

  • Chia-gee Wang

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Crystal Structure
  • Crystals
  • Curie Temperature
  • Epitaxial Growth
  • Fabrication
  • High Temperature
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Piezoceramics
  • Piezoelectric Crystals
  • Piezoelectric Materials
  • Semiconductors
  • Silicon Carbide
  • Three Dimensional
  • Transducers
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Thermal Physics or Thermal Science.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems