Radiation Tolerant Embedded Memory
Abstract
Report Developed under SBIR contract for topic MDA02-021. PicoDyne has developed Ultra-Low-Power(ULP) CMOS design techniques and processes, and combined them with Radiation Hardened By Design methodologies to form its Cool-RAD(tm) process. Complex ULP and Cool- RAD(tm) parts have been built, including data compression devices, Reed-Solomon Encoders and Decoders, and digital signal processors. Memory blocks have been embedded in ULP chips. Radiation Tolerant Memory presents new challenges to the chip designer. During the course of this SBIR, PicoDyne developed a memory architecture for use in Cool-RAD(tm) parts. We started with a small memory cell pair that is insensitive to single event effects, and will scale to smaller geometries to provide the same performance. we then designed arrays of that memory to build up blocks to be used in complex Cool-RAD(tm) parts such as microprocessors and digital signal processors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 19, 2003
- Accession Number
- ADA415944
Entities
People
- Brian H Smith
- Greg Alkire