mm-Wave AlGaN/GaN HFET's
Abstract
AIGaN/GaN HFET's demonstrate considerable promise for advanced RF power sources for communications and radar systems. Experimental HFET devices have produced RF output power on the order of 10-12 W/mm of gate periphery at frequencies up to X-band. However, as frequency is increased to the mm-wave region RF performance significantly degrades. There are a variety of physical effects that currently limit the high frequency performance of these devices. In particular, it is proposed that charge non-confinement in the conducting channel of these devices can produce space charge and related effects that limit the performance of the HFET's. This project investigates charge non-confinement phenomena and develops an analytic channel charge model that can be used in a comprehensive HFET model for use in large-signal RF circuit simulators.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 30, 2003
- Accession Number
- ADA416119
Entities
People
- Robert J. Trew
Organizations
- Virginia Tech